Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer
文献类型:期刊论文
作者 | Bi, DW(重点实验室) ; Zhang, ZX(重点实验室) ; Chen, M ; Wu, AM(重点实验室) ; Wei, X ; Wang, X(重点实验室) |
刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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出版日期 | 2012 |
卷号 | 272页码:257-260 |
关键词 | Instruments & Instrumentation Physics Physics Nuclear Science & Technology Atomic Nuclear Molecular & Chemical |
ISSN号 | 0168-583X |
学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
收录类别 | SCI |
原文出处 | 10.1016/j.nimb.2011.01.078 |
语种 | 英语 |
公开日期 | 2013-05-10 |
源URL | [http://ir.sim.ac.cn/handle/331004/115143] ![]() |
专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
推荐引用方式 GB/T 7714 | Bi, DW,Zhang, ZX,Chen, M,et al. Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:257-260. |
APA | Bi, DW,Zhang, ZX,Chen, M,Wu, AM,Wei, X,&Wang, X.(2012).Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,257-260. |
MLA | Bi, DW,et al."Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):257-260. |
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