中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer

文献类型:期刊论文

作者Bi, DW(重点实验室) ; Zhang, ZX(重点实验室) ; Chen, M ; Wu, AM(重点实验室) ; Wei, X ; Wang, X(重点实验室)
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2012
卷号272页码:257-260
关键词Instruments & Instrumentation Physics Physics Nuclear Science & Technology Atomic Nuclear Molecular & Chemical
ISSN号0168-583X
学科主题Instruments & Instrumentation; Nuclear Science & Technology; Physics
收录类别SCI
原文出处10.1016/j.nimb.2011.01.078
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115143]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Bi, DW,Zhang, ZX,Chen, M,et al. Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:257-260.
APA Bi, DW,Zhang, ZX,Chen, M,Wu, AM,Wei, X,&Wang, X.(2012).Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,257-260.
MLA Bi, DW,et al."Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):257-260.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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