Transportation of carriers in silicon implanted SiO2 films during ionizing radiation
文献类型：期刊论文
| 作者 | Chen, M ; Zhang, Z（重点实验室）X ; Wei, X ; Bi, DW（重点实验室） ; Zou, S（重点实验室）C ; Wang, X（重点实验室） |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2012 |
| 卷号 | 272页码:266-270 |
| 关键词 | Instruments & Instrumentation Physics Physics Nuclear Science & Technology Atomic Nuclear Molecular & Chemical |
| ISSN号 | 0168-583X |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1016/j.nimb.2011.01.080 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115144]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, M,Zhang, Z,Wei, X,et al. Transportation of carriers in silicon implanted SiO2 films during ionizing radiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2012,272:266-270. |
| APA | Chen, M,Zhang, Z,Wei, X,Bi, DW,Zou, S,&Wang, X.(2012).Transportation of carriers in silicon implanted SiO2 films during ionizing radiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,272,266-270. |
| MLA | Chen, M,et al."Transportation of carriers in silicon implanted SiO2 films during ionizing radiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 272(2012):266-270. |
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