The fabrication and properties of InAs/GaAs columnal islands
文献类型：期刊论文
| 作者 | Zhu TW ; Bo X ; Jun H ; Zhao FA ; Zhang CL ; Xie EQ ; Liu FQ ; Wang ZG |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:1页码:301-305 |
| 关键词 | InAs/GaAs columnal islands |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhu, tw, chinese acad sci, inst semicond, key lab semiconductor mat sci, beijing 100083, peoples r china. 电子邮箱地址: zhutw@red.semi.ac.cn |
| 中文摘要 | a columnal islands system, which was composed of three layers of self-assembled inas/gaas quantum dots (qds), has been fabricated by solid-source molecular beam epitaxy (mbe) through s-k mode on a (100) semi-insulating gaas substrate. the effects of the thickness of gaas space layer, the growth interruption time and the amount of inas deposition on the emission wavelength of columnal islands were presented. the image of atomic force microscopy (afm) indicated the columnal islands with high uniformity in size and shape. at room temperature, the emission wavelength of columnal islands with different effective heights was achieved 1.32 and 1.4 mum; however, the emission wavelength of single-layer qds with normal height was just 1. l mum. it provides a useful and intuitive approach to artificially control the emission wavelength of a qd material system. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8202]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu TW,Bo X,Jun H,et al. The fabrication and properties of InAs/GaAs columnal islands[J]. acta physica sinica,2004,53(1):301-305. |
| APA | Zhu TW.,Bo X.,Jun H.,Zhao FA.,Zhang CL.,...&Wang ZG.(2004).The fabrication and properties of InAs/GaAs columnal islands.acta physica sinica,53(1),301-305. |
| MLA | Zhu TW,et al."The fabrication and properties of InAs/GaAs columnal islands".acta physica sinica 53.1(2004):301-305. |
入库方式： OAI收割
来源：半导体研究所
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