中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil

文献类型:期刊论文

作者Zhang, GQ ; Zou, Q ; Sun, P ; Mei, X ; Ruda, HE
刊名materials letters
出版日期2004
卷号58期号:5页码:706-710
关键词ferroelectrics
ISSN号0167-577x
通讯作者zou, q, energenius inc, 351 steelcase rd w 3, markham, on, canada. 电子邮箱地址: qzou@energenius.com
中文摘要we report on improved electrical properties of lead zirconate titanate (pzt) film deposited on titanium metal foil using nitrogen annealing. after nitrogen annealing of the pzt capacitors, symmetric capacitance-voltage (c-v) characteristics, higher dielectric constant and breakdown field, less change of dielectric constant with frequency, lower dielectric loss and leakage current are obtained. (c) 2003 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-09
源URL[http://ir.semi.ac.cn/handle/172111/8206]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang, GQ,Zou, Q,Sun, P,et al. Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil[J]. materials letters,2004,58(5):706-710.
APA Zhang, GQ,Zou, Q,Sun, P,Mei, X,&Ruda, HE.(2004).Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil.materials letters,58(5),706-710.
MLA Zhang, GQ,et al."Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil".materials letters 58.5(2004):706-710.

入库方式: OAI收割

来源:半导体研究所

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