中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

文献类型:期刊论文

作者Bi, H ; Sun, SR ; Huang, FQ ; Xie, XM(重点实验室) ; Jiang, MH(重点实验室)
刊名JOURNAL OF MATERIALS CHEMISTRY
出版日期2012
卷号22期号:2页码:411-416
关键词Chemistry Materials Science Physical Multidisciplinary
ISSN号0959-9428
学科主题Chemistry; Materials Science
收录类别SCI
原文出处10.1039/c1jm14778a
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115202]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Bi, H,Sun, SR,Huang, FQ,et al. Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications[J]. JOURNAL OF MATERIALS CHEMISTRY,2012,22(2):411-416.
APA Bi, H,Sun, SR,Huang, FQ,Xie, XM,&Jiang, MH.(2012).Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications.JOURNAL OF MATERIALS CHEMISTRY,22(2),411-416.
MLA Bi, H,et al."Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications".JOURNAL OF MATERIALS CHEMISTRY 22.2(2012):411-416.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。