Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications
文献类型:期刊论文
作者 | Bi, H ; Sun, SR ; Huang, FQ ; Xie, XM(重点实验室) ; Jiang, MH(重点实验室) |
刊名 | JOURNAL OF MATERIALS CHEMISTRY
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出版日期 | 2012 |
卷号 | 22期号:2页码:411-416 |
关键词 | Chemistry Materials Science Physical Multidisciplinary |
ISSN号 | 0959-9428 |
学科主题 | Chemistry; Materials Science |
收录类别 | SCI |
原文出处 | 10.1039/c1jm14778a |
语种 | 英语 |
公开日期 | 2013-05-10 |
源URL | [http://ir.sim.ac.cn/handle/331004/115202] ![]() |
专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
推荐引用方式 GB/T 7714 | Bi, H,Sun, SR,Huang, FQ,et al. Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications[J]. JOURNAL OF MATERIALS CHEMISTRY,2012,22(2):411-416. |
APA | Bi, H,Sun, SR,Huang, FQ,Xie, XM,&Jiang, MH.(2012).Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications.JOURNAL OF MATERIALS CHEMISTRY,22(2),411-416. |
MLA | Bi, H,et al."Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications".JOURNAL OF MATERIALS CHEMISTRY 22.2(2012):411-416. |
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