High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Xiang, RF ; Fang, YY ; Dai, JN ; Zhang, L ; Su, CY ; Wu, ZH ; Yu, CH ; Xiong, H ; Chen, CQ ; Hao, Y |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2011 |
| 卷号 | 509期号:5页码:2227-2231 |
| 关键词 | Chemistry Materials Science Physical Multidisciplinary Metallurgy & Metallurgical Engineering |
| ISSN号 | 0925-8388 |
| 学科主题 | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering |
| 收录类别 | SCI |
| 原文出处 | 10.1016/j.jallcom.2010.10.189 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115266]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiang, RF,Fang, YY,Dai, JN,et al. High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2011,509(5):2227-2231. |
| APA | Xiang, RF.,Fang, YY.,Dai, JN.,Zhang, L.,Su, CY.,...&Hao, Y.(2011).High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,509(5),2227-2231. |
| MLA | Xiang, RF,et al."High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 509.5(2011):2227-2231. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。