Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
文献类型：期刊论文
| 作者 | Li DB
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2004 |
| 卷号 | 260期号:3-4页码:388-393 |
| 关键词 | triple-axis X-ray diffraction |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu, jp, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | alingan quaternary epilayers have been grown with various tmga flows by metalorganic chemical vapor deposition to investigate the influence of growth rate on the structural and optical properties. triple-axis x-ray diffraction measurements show alingan epilayers have good crystalline quality. photolummescence (pl) measurements show that the emission intensity of alingan epilayers is twenty times stronger than that of algan epilayer with comparable al content. v-shaped pits are observed at the surface of alingan epilayers by atomic force microscopy (afm) and transmission electron microscopy (tem). high growth rate leads to increased density and size of v-shaped pits, but crystalline quality is not degraded. (c) 2003 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8228]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DB. Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows[J]. journal of crystal growth,2004,260(3-4):388-393. |
| APA | Li DB.(2004).Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows.journal of crystal growth,260(3-4),388-393. |
| MLA | Li DB."Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows".journal of crystal growth 260.3-4(2004):388-393. |
入库方式： OAI收割
来源：半导体研究所
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