Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li, SG ; Gong, Q ; Cao, CF ; Wang, XZ ; Wang, RC ; Fan, JP ; Zhang, CX ; Xia, LZ |
| 刊名 | INFRARED PHYSICS & TECHNOLOGY
 |
| 出版日期 | 2011 |
| 卷号 | 54期号:5页码:445-448 |
| 关键词 | Instruments & Instrumentation Physics Optics Applied |
| ISSN号 | 1350-4495 |
| 学科主题 | Instruments & Instrumentation; Optics; Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1016/j.infrared.2011.07.002 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115279]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, SG,Gong, Q,Cao, CF,et al. Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy[J]. INFRARED PHYSICS & TECHNOLOGY,2011,54(5):445-448. |
| APA | Li, SG.,Gong, Q.,Cao, CF.,Wang, XZ.,Wang, RC.,...&Xia, LZ.(2011).Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy.INFRARED PHYSICS & TECHNOLOGY,54(5),445-448. |
| MLA | Li, SG,et al."Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy".INFRARED PHYSICS & TECHNOLOGY 54.5(2011):445-448. |
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