Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2004 |
| 卷号 | 95期号:2页码:752-754 |
| ISSN号 | 0021-8979 |
| 关键词 | PHOTOLUMINESCENCE |
| 通讯作者 | chang, k, chinese acad sci, inst semicond, nlsm, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | suppression of the exciton recombination in gaas0.7sb0.3/gaas/gaas0.7p0.3 coupled quantum well (cqw) induced by an external magnetic field is investigated theoretically. unlike the usual electro-stark effect, the exciton energy dispersion of an exciton is modified by an external in-plane magnetic field, the ground state of the magnetoexciton shifts from a zero in-plane center of mass (cm) momentum to a finite cm momentum, and the lorentz force induces the spatial separation of electron and hole. consequently, this effect renders the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. this effect depends sensitively on the thickness and height of gaas0.7sb0.3 layer, therefore it could provide us useful infometion about the band alignment of cqw. (c) 2004 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8234]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field[J]. journal of applied physics,2004,95(2):752-754. |
| APA | Jiang DS.(2004).Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field.journal of applied physics,95(2),752-754. |
| MLA | Jiang DS."Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field".journal of applied physics 95.2(2004):752-754. |
入库方式： OAI收割
来源：半导体研究所
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