Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
文献类型：期刊论文
| 作者 | Jayasinghe, RC ; Lao, YF ; Perera, AGU ; Hammar, M ; Cao, CF ; Wu, HZ |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2012 |
| 卷号 | 24期号:43页码:435803 |
| 关键词 | Physics Condensed Matter |
| ISSN号 | 0953-8984 |
| 学科主题 | Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1088/0953-8984/24/43/435803 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115315]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jayasinghe, RC,Lao, YF,Perera, AGU,et al. Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2012,24(43):435803. |
| APA | Jayasinghe, RC,Lao, YF,Perera, AGU,Hammar, M,Cao, CF,&Wu, HZ.(2012).Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films.JOURNAL OF PHYSICS-CONDENSED MATTER,24(43),435803. |
| MLA | Jayasinghe, RC,et al."Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films".JOURNAL OF PHYSICS-CONDENSED MATTER 24.43(2012):435803. |
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