Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition
文献类型：期刊论文
| 作者 | Peng, YC ; Ikeda, M ; Miyazaki, S |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:12页码:3108-3113 |
| 关键词 | Si nanoquanturn dots |
| ISSN号 | 1000-3290 |
| 通讯作者 | peng, yc, hebei univ, coll elect & informat engn, baoding 071002, peoples r china. |
| 中文摘要 | si nanoquantum dots have been formed by self-assembled growth on the both si-o-si and si-oh bonds terminated sio2 surfaces using the low-pressure chemical vapor deposition (lpcvd) and surface thermal decomposition of pure sih4 gas. we have experimentally studied the variation of si. dot density with si-oh bonds density, deposition temperature and sih4 pressure, and analyzed qualitatively the formation mechanism of the si nanoquantum dots based on lpcvd surface thermal dynamics principle. the results are very. important for the control of the density and size of si nanoquantum dots, and have potential applications in the new quantum devices. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-09 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8238]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Peng, YC,Ikeda, M,Miyazaki, S. Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition[J]. acta physica sinica,2003,52(12):3108-3113. |
| APA | Peng, YC,Ikeda, M,&Miyazaki, S.(2003).Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition.acta physica sinica,52(12),3108-3113. |
| MLA | Peng, YC,et al."Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition".acta physica sinica 52.12(2003):3108-3113. |
入库方式： OAI收割
来源：半导体研究所
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