中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE

文献类型:期刊论文

作者Gu, Y ; Li, H ; Li, AZ ; Li, YY ; Wei, L ; Zhang, YG(重点实验室) ; Wang, K ; Zheng, YL
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2009
卷号311期号:7页码:1929-1931
关键词Crystallography Materials Science Physics Multidisciplinary Applied
ISSN号0022-0248
学科主题Crystallography; Materials Science; Physics
收录类别SCI
原文出处10.1016/j.jcrysgro.2008.11.004
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115372]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Gu, Y,Li, H,Li, AZ,et al. Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE[J]. JOURNAL OF CRYSTAL GROWTH,2009,311(7):1929-1931.
APA Gu, Y.,Li, H.,Li, AZ.,Li, YY.,Wei, L.,...&Zheng, YL.(2009).Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE.JOURNAL OF CRYSTAL GROWTH,311(7),1929-1931.
MLA Gu, Y,et al."Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE".JOURNAL OF CRYSTAL GROWTH 311.7(2009):1929-1931.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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