Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
文献类型：期刊论文
| 作者 | Gu, Y ; Li, H ; Li, AZ ; Li, YY ; Wei, L ; Zhang, YG（重点实验室） ; Wang, K ; Zheng, YL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2009 |
| 卷号 | 311期号:7页码:1929-1931 |
| 关键词 | Crystallography Materials Science Physics Multidisciplinary Applied |
| ISSN号 | 0022-0248 |
| 学科主题 | Crystallography; Materials Science; Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1016/j.jcrysgro.2008.11.004 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115372]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gu, Y,Li, H,Li, AZ,et al. Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE[J]. JOURNAL OF CRYSTAL GROWTH,2009,311(7):1929-1931. |
| APA | Gu, Y.,Li, H.,Li, AZ.,Li, YY.,Wei, L.,...&Zheng, YL.(2009).Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE.JOURNAL OF CRYSTAL GROWTH,311(7),1929-1931. |
| MLA | Gu, Y,et al."Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE".JOURNAL OF CRYSTAL GROWTH 311.7(2009):1929-1931. |
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