Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well
文献类型:期刊论文
作者 | Gao, KH ; Zhou, WZ ; Zhou, YM ; Yu, G ; Lin, T ; Guo, SL ; Chu, JH ; Dai, N ; Gu, Y ; Zhang, YG(重点实验室) ; Austing, DG |
刊名 | APPLIED PHYSICS LETTERS
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出版日期 | 2009 |
卷号 | 94期号:15页码:152107 |
关键词 | Physics Applied |
ISSN号 | 0003-6951 |
学科主题 | Physics |
收录类别 | SCI |
原文出处 | 10.1063/1.3119664 |
语种 | 英语 |
公开日期 | 2013-05-10 |
源URL | [http://ir.sim.ac.cn/handle/331004/115374] ![]() |
专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
推荐引用方式 GB/T 7714 | Gao, KH,Zhou, WZ,Zhou, YM,et al. Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well[J]. APPLIED PHYSICS LETTERS,2009,94(15):152107. |
APA | Gao, KH.,Zhou, WZ.,Zhou, YM.,Yu, G.,Lin, T.,...&Austing, DG.(2009).Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well.APPLIED PHYSICS LETTERS,94(15),152107. |
MLA | Gao, KH,et al."Magnetoresistance in high-density two-dimensional electron gas confined in InAlAs/InGaAs quantum well".APPLIED PHYSICS LETTERS 94.15(2009):152107. |
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