Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer
文献类型：期刊论文
| 作者 | Guo, QX ; Sueyasu, Y ; Tanaka, T ; Nishio, M ; Cao, JC |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 48期号:8页码:80208 |
| 关键词 | Physics Applied |
| ISSN号 | 0021-4922 |
| 学科主题 | Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1143/JJAP.48.080208 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115387]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, QX,Sueyasu, Y,Tanaka, T,et al. Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2009,48(8):80208. |
| APA | Guo, QX,Sueyasu, Y,Tanaka, T,Nishio, M,&Cao, JC.(2009).Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer.JAPANESE JOURNAL OF APPLIED PHYSICS,48(8),80208. |
| MLA | Guo, QX,et al."Improvement in the Quality of ZnTe Epilayers Grown on GaAs Substrates by Introducing a Low-Temperature Buffer Layer".JAPANESE JOURNAL OF APPLIED PHYSICS 48.8(2009):80208. |
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