Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires
文献类型：期刊论文
| 作者 | Dai L ; Liu SF ; You LP ; Zhang JC ; Qin GG |
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2005 |
| 卷号 | 17期号:43页码:l445-l449 |
| 关键词 | GALLIUM NITRIDE NANOWIRES |
| ISSN号 | 0953-8984 |
| 通讯作者 | qin, gg, peking univ, sch phys, beijing 100871, peoples r china. 电子邮箱地址: qingg@pku.edu.cn |
| 中文摘要 | gan nanowires have been grown with and without in as an additional source. the effects of in surfactant on the crystal quality and photoluminescence property of gan nanowires are reported for the first time. x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy, and photoluminescence measurements are employed to analyse the products. the results show that introducing a certain amount of in surfactant during the growth process can improve the crystal quality of the gan nanowires, and enhance the photolurainescence of them. in addition, the as-prepared gan nanowires have the advantage of being easy to be separated, which will benefit the subsequent nanodevice fabrication. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8390]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dai L,Liu SF,You LP,et al. Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires[J]. journal of physics-condensed matter,2005,17(43):l445-l449. |
| APA | Dai L,Liu SF,You LP,Zhang JC,&Qin GG.(2005).Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires.journal of physics-condensed matter,17(43),l445-l449. |
| MLA | Dai L,et al."Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires".journal of physics-condensed matter 17.43(2005):l445-l449. |
入库方式： OAI收割
来源：半导体研究所
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