中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Experimental observation of resonant modes in GaInAsP microsquare resonators

文献类型:期刊论文

作者Yu LJ
刊名ieee photonics technology letters
出版日期2005
卷号17期号:12页码:2589-2591
关键词GaInAsP-InP
ISSN号1041-1135
通讯作者huang, yz, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: yzhuang@red.semi.ac.cn
中文摘要gainasp-inp microsquare resonators with inp pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. the mode q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. the experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (wg)-like modes, which has mode interval twice of that determined by the cavity length. the finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the q-factors between the wg-like modes and the other modes.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8392]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Yu LJ. Experimental observation of resonant modes in GaInAsP microsquare resonators[J]. ieee photonics technology letters,2005,17(12):2589-2591.
APA Yu LJ.(2005).Experimental observation of resonant modes in GaInAsP microsquare resonators.ieee photonics technology letters,17(12),2589-2591.
MLA Yu LJ."Experimental observation of resonant modes in GaInAsP microsquare resonators".ieee photonics technology letters 17.12(2005):2589-2591.

入库方式: OAI收割

来源:半导体研究所

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