Experimental observation of resonant modes in GaInAsP microsquare resonators
文献类型:期刊论文
作者 | Yu LJ![]() |
刊名 | ieee photonics technology letters
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出版日期 | 2005 |
卷号 | 17期号:12页码:2589-2591 |
关键词 | GaInAsP-InP |
ISSN号 | 1041-1135 |
通讯作者 | huang, yz, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: yzhuang@red.semi.ac.cn |
中文摘要 | gainasp-inp microsquare resonators with inp pedestals are fabricated by two-step chemical etching, and obvious mode peaks are observed in the photoluminescence spectra of the resonators. the mode q-factors about 500 are obtained for a microsquare resonator with the side length of 7 mu m. the experimental mode interval is in agreement with that predicted by the light ray method based on the cavity length, instead of that of the whispering-gallery (wg)-like modes, which has mode interval twice of that determined by the cavity length. the finite-difference time-domain simulation shows that a little asymmetry may greatly reduce the difference of the q-factors between the wg-like modes and the other modes. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/8392] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yu LJ. Experimental observation of resonant modes in GaInAsP microsquare resonators[J]. ieee photonics technology letters,2005,17(12):2589-2591. |
APA | Yu LJ.(2005).Experimental observation of resonant modes in GaInAsP microsquare resonators.ieee photonics technology letters,17(12),2589-2591. |
MLA | Yu LJ."Experimental observation of resonant modes in GaInAsP microsquare resonators".ieee photonics technology letters 17.12(2005):2589-2591. |
入库方式: OAI收割
来源:半导体研究所
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