Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on Insulator
文献类型：期刊论文
| 作者 | Liu, XY ; Liu, WL ; Ma, XB ; song, zt(重点实验室） ; Lin, CLFeng, SL |
| 刊名 | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
 |
| 出版日期 | 2010 |
| 页码 | 1020-1021 |
| 关键词 | Engineering Electrical & Electronic Nanoscience & Nanotechnology |
| 学科主题 | Engineering; Science & Technology - Other Topics |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115461]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, XY,Liu, WL,Ma, XB,et al. Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on Insulator[J]. INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010:1020-1021. |
| APA | Liu, XY,Liu, WL,Ma, XB,song, zt,&Lin, CLFeng, SL.(2010).Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on Insulator.INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,1020-1021. |
| MLA | Liu, XY,et al."Strain relaxation in nano-patterned strained-Si/SiGe heterostructure on Insulator".INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 (2010):1020-1021. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。