中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study of phase change memory cell with inserting buffer layer

文献类型:期刊论文

作者Wu, LC ; Zhou, XL ; song, zt(重点实验室) ; Liu, Y ; Ni, HN ; Gong, YF ; Rao, F ; Yao, DL ; Liu, B(重点实验室) ; Song, SN ; Feng, SL(重点实验室)
刊名PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4
出版日期2010
卷号7期号:41337页码:1207-1210
关键词Engineering Physics Electrical & Electronic Nanoscience & Nanotechnology Applied
ISSN号1862-6351
学科主题Engineering; Science & Technology - Other Topics; Physics
收录类别SCI
原文出处10.1002/pssc.200982712
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115465]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Wu, LC,Zhou, XL,song, zt,et al. Study of phase change memory cell with inserting buffer layer[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4,2010,7(41337):1207-1210.
APA Wu, LC.,Zhou, XL.,song, zt.,Liu, Y.,Ni, HN.,...&Feng, SL.(2010).Study of phase change memory cell with inserting buffer layer.PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4,7(41337),1207-1210.
MLA Wu, LC,et al."Study of phase change memory cell with inserting buffer layer".PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 7.41337(2010):1207-1210.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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