One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering
文献类型：期刊论文
| 作者 | Cong, GW ; Wei, HY ; Zhang, PF ; Peng, WQ ; Wu, JJ ; Liu, XL ; Jiao, CM ; Hu, WG ; Zhu, QS ; Wang, ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:23页码:art.no.231903 |
| 关键词 | NANOWIRES |
| ISSN号 | 0003-6951 |
| 通讯作者 | cong, gw, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: gwcong@semi.ac.cn |
| 中文摘要 | we observed a transition from film to vertically well-aligned nanorods for zno grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. a growth mechanism was proposed to explain such a transition. vertically well-aligned homogeneous nanorods with average diameters of similar to 30, 45, 60, and 70 nm were grown with the c-axis orientation. raman scattering showed that the e-2 (high) mode shifted to high frequency with the decrease of nanorod diameters, which revealed the dependence of nanorod diameters on the stress state. this dependence suggests a stress-driven diameter-controlled mechanism for zno nanorod arrays grown on sapphire (0001) substrates. (c) 2005 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8396]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cong, GW,Wei, HY,Zhang, PF,et al. One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering[J]. applied physics letters,2005,87(23):art.no.231903. |
| APA | Cong, GW.,Wei, HY.,Zhang, PF.,Peng, WQ.,Wu, JJ.,...&Wang, ZG.(2005).One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering.applied physics letters,87(23),art.no.231903. |
| MLA | Cong, GW,et al."One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering".applied physics letters 87.23(2005):art.no.231903. |
入库方式： OAI收割
来源：半导体研究所
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