Modified postannealing of the Ge condensation process for better-strained Si material and devices
文献类型：期刊论文
| 作者 | Liu, XY ; Ma, XB ; Du, XF ; Liu, WL ; song, zt(重点实验室） ; Lin, CL |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 2010 |
| 卷号 | 28期号:5页码:1020-1025 |
| 关键词 | Engineering Physics Electrical & Electronic Nanoscience & Nanotechnology Applied |
| ISSN号 | 1071-1023 |
| 学科主题 | Engineering; Science & Technology - Other Topics; Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1116/1.3491186 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115482]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, XY,Ma, XB,Du, XF,et al. Modified postannealing of the Ge condensation process for better-strained Si material and devices[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2010,28(5):1020-1025. |
| APA | Liu, XY,Ma, XB,Du, XF,Liu, WL,song, zt,&Lin, CL.(2010).Modified postannealing of the Ge condensation process for better-strained Si material and devices.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,28(5),1020-1025. |
| MLA | Liu, XY,et al."Modified postannealing of the Ge condensation process for better-strained Si material and devices".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 28.5(2010):1020-1025. |
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