Effect of hydrogen peroxide concentration on surface micro- roughness of silicon wafer after final polishing
文献类型：期刊论文
| 作者 | Wang, HB ; song, zt(重点实验室） ; Liu, WL ; Kong, H |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2011 |
| 卷号 | 88期号:6页码:1010-1015 |
| 关键词 | Engineering Physics Electrical & Electronic Nanoscience & Nanotechnology Applied Optics |
| ISSN号 | 0167-9317 |
| 学科主题 | Engineering; Science & Technology - Other Topics; Optics; Physics |
| 收录类别 | SCI |
| 原文出处 | 10.1016/j.mee.2011.01.067 |
| 语种 | 英语 |
| 公开日期 | 2013-05-10 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/115511]  |
| 专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, HB,song, zt,Liu, WL,et al. Effect of hydrogen peroxide concentration on surface micro- roughness of silicon wafer after final polishing[J]. MICROELECTRONIC ENGINEERING,2011,88(6):1010-1015. |
| APA | Wang, HB,song, zt,Liu, WL,&Kong, H.(2011).Effect of hydrogen peroxide concentration on surface micro- roughness of silicon wafer after final polishing.MICROELECTRONIC ENGINEERING,88(6),1010-1015. |
| MLA | Wang, HB,et al."Effect of hydrogen peroxide concentration on surface micro- roughness of silicon wafer after final polishing".MICROELECTRONIC ENGINEERING 88.6(2011):1010-1015. |
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