中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material

文献类型:期刊论文

作者Sun, ZM ; Zhou, J ; Pan, YC ; song, zt(重点实验室) ; Mao, HK ; Ahuja, R
刊名PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
出版日期2011
卷号108期号:26页码:10410-10414
关键词Multidisciplinary Sciences
ISSN号0027-8424
学科主题Science & Technology - Other Topics
收录类别SCI
原文出处10.1073/pnas.1107464108
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115514]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Sun, ZM,Zhou, J,Pan, YC,et al. Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2011,108(26):10410-10414.
APA Sun, ZM,Zhou, J,Pan, YC,song, zt,Mao, HK,&Ahuja, R.(2011).Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material.PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,108(26),10410-10414.
MLA Sun, ZM,et al."Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge2Sb2Te5 phase-change memory material".PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 108.26(2011):10410-10414.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。