Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation
文献类型：期刊论文
| 作者 | Zhang EX ; Sun JY ; Chen J ; Zhang ZX ; Wang X ; Li N ; Zhang GQ ; Liu ZL |
| 刊名 | journal of electronic materials
 |
| 出版日期 | 2005 |
| 卷号 | 34期号:11页码:l53-l56 |
| ISSN号 | 0361-5235 |
| 关键词 | silicon-on-insulator (SOI) |
| 通讯作者 | zhang, ex, chinese acad sci, shanghai inst microsyst & informat technol, shanghai 200050, peoples r china. 电子邮箱地址: yqfzhexia@163.com |
| 中文摘要 | in our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (simox) wafers to improve the radiation hardness of the simox material. the experiments of secondary ion mass spectroscopy (sims) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the si/sio2 interface after annealing. the results of electron paramagnetic resonance (epr) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. semiconductor-insulator-semiconductor (sis) capacitors were made on the materials, and capacitance-voltage (c-v) measurements were carried out to confirm the results. the super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (nmosfets) fabricated on the materials before and after total dose irradiation. the optimum implantation energy was also determined. |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8410]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang EX,Sun JY,Chen J,et al. Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation[J]. journal of electronic materials,2005,34(11):l53-l56. |
| APA | Zhang EX.,Sun JY.,Chen J.,Zhang ZX.,Wang X.,...&Liu ZL.(2005).Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation.journal of electronic materials,34(11),l53-l56. |
| MLA | Zhang EX,et al."Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation".journal of electronic materials 34.11(2005):l53-l56. |
入库方式： OAI收割
来源：半导体研究所
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