Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5
文献类型:期刊论文
作者 | Zhang, ZF ; Liu, WL ; song, zt(重点实验室) |
刊名 | CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) |
出版日期 | 2010 |
卷号 | 27期号:1页码:605-611 |
ISSN号 | 1938-5862 |
关键词 | Electrochemistry Engineering Electrical & Electronic |
学科主题 | Electrochemistry; Engineering |
收录类别 | SCI |
原文出处 | 10.1149/1.3360682 |
语种 | 英语 |
公开日期 | 2013-05-10 |
源URL | [http://ir.sim.ac.cn/handle/331004/115567] |
专题 | 上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, ZF,Liu, WL,song, zt. Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010),2010,27(1):605-611. |
APA | Zhang, ZF,Liu, WL,&song, zt.(2010).Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5.CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010),27(1),605-611. |
MLA | Zhang, ZF,et al."Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5".CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) 27.1(2010):605-611. |
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