中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5

文献类型:期刊论文

作者Zhang, ZF ; Liu, WL ; song, zt(重点实验室)
刊名CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010)
出版日期2010
卷号27期号:1页码:605-611
ISSN号1938-5862
关键词Electrochemistry Engineering Electrical & Electronic
学科主题Electrochemistry; Engineering
收录类别SCI
原文出处10.1149/1.3360682
语种英语
公开日期2013-05-10
源URL[http://ir.sim.ac.cn/handle/331004/115567]  
专题上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式
GB/T 7714
Zhang, ZF,Liu, WL,song, zt. Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010),2010,27(1):605-611.
APA Zhang, ZF,Liu, WL,&song, zt.(2010).Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5.CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010),27(1),605-611.
MLA Zhang, ZF,et al."Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5".CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) 27.1(2010):605-611.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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