Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique
文献类型：期刊论文
| 作者 | Liu, SF ; Qin, GG ; You, LP ; Zhang, JC ; Fu, ZX ; Dai, L |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:9页码:4329-4333 |
| 关键词 | GaN |
| ISSN号 | 1000-3290 |
| 通讯作者 | dai, l, peking univ, sch phys, beijing 100871, peoples r china. 电子邮箱地址: lundai@ibm320h.phy.pku.edu.cn |
| 中文摘要 | a two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. this system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. these are in favor of synthesizing compound semiconducting nano-materials. by the system, we have synthesized high-quality wurtzite single crystal gan nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on si and 3c-sic epilayer/si substrates. the products were analyzed by x-ray diffraction, field emission scanning electron microscopy, highresolution transmission electron microscopy, energy- dispersive x-ray spectroscopy, and photoluminescence measurements. the gan nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8438]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, SF,Qin, GG,You, LP,et al. Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique[J]. acta physica sinica,2005,54(9):4329-4333. |
| APA | Liu, SF,Qin, GG,You, LP,Zhang, JC,Fu, ZX,&Dai, L.(2005).Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique.acta physica sinica,54(9),4329-4333. |
| MLA | Liu, SF,et al."Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an in-doping technique".acta physica sinica 54.9(2005):4329-4333. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。