Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density
文献类型：期刊论文
| 作者 | Duan RF
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2005 |
| 卷号 | 98期号:8页码:art.no.084305 |
| 关键词 | LOCALIZED EXCITONS |
| ISSN号 | 0021-8979 |
| 通讯作者 | xu, sj, univ hong kong, dept phys, cas, joint lab new mat, pokfulam rd, hong kong, hong kong, peoples r china. 电子邮箱地址: sjxu@hkucc.hku.hk |
| 中文摘要 | variable-temperature photoluminescence (pl) spectra of si-doped self-assembled ingaas quantum dots (qds) with and without gaas cap layers were measured. narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface qds at low temperature, respectively. as large as 210 mev redshift of the pl peak of the surface qds with respect to that of the buried qds is mainly due to the change of the strain around qds before and after growth of the gaas cap layer. using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of pl peaks and integrated intensities of the two samples. the results reveal that there exists a large difference in microscopic mechanisms of pl thermal quenching between two samples. (c) 2005 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8448]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan RF. Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density[J]. journal of applied physics,2005,98(8):art.no.084305. |
| APA | Duan RF.(2005).Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density.journal of applied physics,98(8),art.no.084305. |
| MLA | Duan RF."Thermal quenching of luminescence from buried and surface InGaAs self-assembled quantum dots with high sheet density".journal of applied physics 98.8(2005):art.no.084305. |
入库方式： OAI收割
来源：半导体研究所
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