中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Self-starting passively mode-locking all-solid-state laser with GaAs absorber grown at low temperature

文献类型:期刊论文

作者Jia YL ; Ling WJ ; Wei ZY ; Wang YG ; Ma XY
刊名chinese physics letters
出版日期2005
卷号22期号:10页码:2575-2577
关键词SEMICONDUCTOR SATURABLE ABSORBERS
ISSN号0256-307x
通讯作者wei, zy, chinese acad sci, inst phys, lab opt phys, beijing 100080, peoples r china. 电子邮箱地址: zywei@aphy.iphy.ac.cn
中文摘要we realize a stable self-starting passively mode-locking all-solid-state laser by using novel gaas mirrors as the absorber and output coupler. the gaas mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. with such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400mhz, corresponding to the average power of 590mw.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8458]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Jia YL,Ling WJ,Wei ZY,et al. Self-starting passively mode-locking all-solid-state laser with GaAs absorber grown at low temperature[J]. chinese physics letters,2005,22(10):2575-2577.
APA Jia YL,Ling WJ,Wei ZY,Wang YG,&Ma XY.(2005).Self-starting passively mode-locking all-solid-state laser with GaAs absorber grown at low temperature.chinese physics letters,22(10),2575-2577.
MLA Jia YL,et al."Self-starting passively mode-locking all-solid-state laser with GaAs absorber grown at low temperature".chinese physics letters 22.10(2005):2575-2577.

入库方式: OAI收割

来源:半导体研究所

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