Photoluminescence study on Eu-implanted GaN
文献类型：期刊论文
| 作者 | Zhang CG ; Bian LF ; Chen WD |
| 刊名 | chinese physics
 |
| 出版日期 | 2005 |
| 卷号 | 14期号:10页码:2141-2144 |
| 关键词 | photoluminescence |
| ISSN号 | 1009-1963 |
| 通讯作者 | zhang, cg, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. 电子邮箱地址: zhangcg@semi.ac.cn |
| 中文摘要 | the photoluminescence (pl) properties of eu-implanted gan thin films are studied. the experimental results show that the pl intensity is seriously affected by ion implantation conditions. the pl efficiency increases exponentially with annealing temperature increasing up to a maximum temperature of 1050 degrees c. moreover, the pl intensity for the sample implanted along the channelling direction is nearly twice more than that observed from the sample implanted along the random direction. the thermal quenching of pl intensity from 10k to 300k for sample annealed at 1050 degrees c is only 42.7%. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8482]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang CG,Bian LF,Chen WD. Photoluminescence study on Eu-implanted GaN[J]. chinese physics,2005,14(10):2141-2144. |
| APA | Zhang CG,Bian LF,&Chen WD.(2005).Photoluminescence study on Eu-implanted GaN.chinese physics,14(10),2141-2144. |
| MLA | Zhang CG,et al."Photoluminescence study on Eu-implanted GaN".chinese physics 14.10(2005):2141-2144. |
入库方式： OAI收割
来源：半导体研究所
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