High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy
文献类型：期刊论文
| 作者 | Zhang SY ; Niu ZC ; Ni HQ ; Wu DH ; He ZH ; Sun Z ; Han Q ; Wu RH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:16页码:art.no.161911 |
| 关键词 | IMPROVED LUMINESCENCE EFFICIENCY |
| ISSN号 | 0003-6951 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, state key lab superlattice & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn |
| 中文摘要 | high structural and optical quality 1.3 mu m gainnas/gaas quantum well (qw) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. the cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content qws. the room-temperature photoluminescence peak intensity of the gain0.425nas/gaas (6 nm/20 nm) 3qw is higher than, and the full width at half maximum is comparable to, that of in0.425gaas/gaas 3qw, indicating improved optical quality caused by strain compensation effect of introducing n to the high indium content ingaas epilayer. (c) 2005 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8486]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SY,Niu ZC,Ni HQ,et al. High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy[J]. applied physics letters,2005,87(16):art.no.161911. |
| APA | Zhang SY.,Niu ZC.,Ni HQ.,Wu DH.,He ZH.,...&Wu RH.(2005).High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy.applied physics letters,87(16),art.no.161911. |
| MLA | Zhang SY,et al."High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy".applied physics letters 87.16(2005):art.no.161911. |
入库方式： OAI收割
来源：半导体研究所
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