Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
文献类型：期刊论文
| 作者 | Wang XL ; Wang CM ; Hu GX ; Wang JX ; Chen TS ; Jiao G ; Li JP ; Zeng YP ; Li JM |
| 刊名 | solid-state electronics
 |
| 出版日期 | 2005 |
| 卷号 | 49期号:8页码:1387-1390 |
| ISSN号 | 0038-1101 |
| 关键词 | HEMT |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn ; cmwang@red.semi.ac.cn |
| 中文摘要 | high-quality algan/gan high electron mobility transistor (hemt) structures were grown by metalorganic chemical vapor deposition (mocvd) on 2-in. sapphire substrates. two-dimensional electron gas (2deg) mobility of 1410 cm(2)/vs and concentration of 1.0x10(13) cm-2 are obtained at 295 k from the hemt structures, whose average sheet resistance and sheet resistance uniformity are measured to be about 395 omega/sq and 96.65% on 2-in. wafers, respectively. algan/gan hemts with 0.8 mu m gate length and 0.2 mm gate width were fabricated and characterized using the grown hemt structures. maximum current density of 0.9 a/ mm, peak extrinsic transconductance of 290 ms/mm, unity cutoff frequency (f(t)) of 20 ghz and maximum oscillation frequency (f(max) of 46 ghz are achieved. these results represent significant improvements over the previously fabricated devices with the same gate length, which are attributed to the improved performances of the mocvd-grown hemt structures. (c) 2005 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8488]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XL,Wang CM,Hu GX,et al. Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates[J]. solid-state electronics,2005,49(8):1387-1390. |
| APA | Wang XL.,Wang CM.,Hu GX.,Wang JX.,Chen TS.,...&Li JM.(2005).Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates.solid-state electronics,49(8),1387-1390. |
| MLA | Wang XL,et al."Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates".solid-state electronics 49.8(2005):1387-1390. |
入库方式： OAI收割
来源：半导体研究所
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