10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE
文献类型：期刊论文
| 作者 | Li BX ; Zhu HL ; Zhang J ; Zhao Q ; Pian JQ ; Ding Y ; Wang BJ ; Bian J ; Zhao LJ ; Wang W |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:9页码:917-920 |
| ISSN号 | 0268-1242 |
| 关键词 | BANDWIDTH |
| 通讯作者 | li, bx, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. |
| 中文摘要 | a distributed-feedback (dfb) laser and a high-speed electroabsorption (ea) modulator are integrated, on the basis of the selective area movpe growth (sag) technique and the ridge waveguide structure, for a 10 gbit s(-1) optical transmission system. the integrated dfb laser/ea modulator device is packaged in a compact module with a 20% optical coupling efficiency to the single-mode fibre. the typical threshold current is 15 ma, and the side-mode suppression ratio is over 40 db with the single-mode operation at 1550 nm. the module exhibits 1.2 mw fibre output power at a laser gain current of 70 ma and a modulator bias voltage of 0 v. the 3 db bandwidth is 12 ghz. a dynamic extinction ratio of over 10 db has been successfully achieved under 10 gbit s(-1) non-return to zero (nrz) operation, and a clearly open eye diagram is obtained. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8498]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li BX,Zhu HL,Zhang J,et al. 10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE[J]. semiconductor science and technology,2005,20(9):917-920. |
| APA | Li BX.,Zhu HL.,Zhang J.,Zhao Q.,Pian JQ.,...&Wang W.(2005).10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE.semiconductor science and technology,20(9),917-920. |
| MLA | Li BX,et al."10 Gbit s(-1) electroabsorption-modulated laser light-source module using selective area MOVPE".semiconductor science and technology 20.9(2005):917-920. |
入库方式： OAI收割
来源：半导体研究所
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