Transverse magnetic field effect on the current hysteresis of doped GaAs/AlAs superlattice
文献类型：期刊论文
| 作者 | Sun, BQ ; Wang, JN ; Jiang, DS |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:9页码:947-951 |
| 关键词 | CURRENT SELF-OSCILLATION |
| ISSN号 | 0268-1242 |
| 通讯作者 | sun, bq, chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn |
| 中文摘要 | the influence of a transverse magnetic field up to 13 t at 1.6 k on the current-voltage, i (v), characteristics of a doped gaas/alas superlattice was investigated. current hysteresis was observed in the domain formation regions of the i (v) at zero magnetic field while applied bias was swept in both up (0-6 v) and down (6-0 v) directions. the magnitude of current hysteresis was reduced and finally disappeared with increasing transverse magnetic field. the effect is explained as the modification of the current density versus electric field characteristic by transverse magnetic fields. calculated results based on the tunnelling current formula in a superlattice support our interpretation. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8500]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, BQ,Wang, JN,Jiang, DS. Transverse magnetic field effect on the current hysteresis of doped GaAs/AlAs superlattice[J]. semiconductor science and technology,2005,20(9):947-951. |
| APA | Sun, BQ,Wang, JN,&Jiang, DS.(2005).Transverse magnetic field effect on the current hysteresis of doped GaAs/AlAs superlattice.semiconductor science and technology,20(9),947-951. |
| MLA | Sun, BQ,et al."Transverse magnetic field effect on the current hysteresis of doped GaAs/AlAs superlattice".semiconductor science and technology 20.9(2005):947-951. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。