High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Wang SM ; Gu QF ; Wei YQ ; Sadeghi M ; Larsson A ; Zhao QX ; Wang XD ; Ma CH ; Xing ZG |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:14页码:art.no.141913 |
| 关键词 | GAINNAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang, sm, chalmers univ technol, dept microtechnol & nanosci, s-41296 gothenburg, sweden. 电子邮箱地址: shumin.wang@mc2.chalmers.se |
| 中文摘要 | high-quality ganas/gaas quantum wells with high substitutional n concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. no phase separation is observed and the ganas well thickness is limited by the critical thickness. strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick gan0.06as0.94/gaas quantum well. (c) 2005 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8506]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang SM,Gu QF,Wei YQ,et al. High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy[J]. applied physics letters,2005,87(14):art.no.141913. |
| APA | Wang SM.,Gu QF.,Wei YQ.,Sadeghi M.,Larsson A.,...&Xing ZG.(2005).High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy.applied physics letters,87(14),art.no.141913. |
| MLA | Wang SM,et al."High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy".applied physics letters 87.14(2005):art.no.141913. |
入库方式： OAI收割
来源：半导体研究所
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