A novel method for positioning of InAs islands on GaAs(110)
文献类型：期刊论文
| 作者 | Xu B ; Jin P
|
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005 |
| 卷号 | 28期号:4页码:537-544 |
| 关键词 | InAs island |
| ISSN号 | 1386-9477 |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yhchen@red.semi.ac.cn |
| 中文摘要 | a novel method for positioning of inas islands on gaas (110) by cleaved edge overgrowth is reported. the first growth sample contains strained inxga1-xas/gaas superlattice (sl) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. atoms incident on the cleaved edge will preferentially migrate to ingaas regions where favorable bonding sites are available. by this method inas island chains with lateral periodicity defined by the thickness of ingaas and gaas of sl have been realized by molecular beam epitaxy (mbe). they are observed by means of atomic force microscopy (afm). the strain nanopattern's effect is studied by the different indium fraction of sl and mbe growth conditions. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8510]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Jin P. A novel method for positioning of InAs islands on GaAs(110)[J]. physica e-low-dimensional systems & nanostructures,2005,28(4):537-544. |
| APA | Xu B,&Jin P.(2005).A novel method for positioning of InAs islands on GaAs(110).physica e-low-dimensional systems & nanostructures,28(4),537-544. |
| MLA | Xu B,et al."A novel method for positioning of InAs islands on GaAs(110)".physica e-low-dimensional systems & nanostructures 28.4(2005):537-544. |
入库方式： OAI收割
来源：半导体研究所
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