Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R
文献类型：期刊论文
| 作者 | Zheng, K ; Ma, XY ; Lin, T ; Wang, J ; Liu, SP ; Zhang, GZ |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:9页码:2269-2272 |
| 关键词 | QUANTUM-WELL |
| ISSN号 | 0256-307x |
| 通讯作者 | zheng, k, chinese acad sci, inst semicond, natl engn res ctr optoelect device, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhengkai@mail.semi.ac.cn |
| 中文摘要 | we investigate a new structure of high-power 660-nm algainp laser diodes. in the structure, a p-gaas layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. stable fundamental mode operation was achieved at up to 80 mw without kinks, and the maximum output power was 184 mw at 22 degrees c. the threshold current was 40 ma. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8522]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng, K,Ma, XY,Lin, T,et al. Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R[J]. chinese physics letters,2005,22(9):2269-2272. |
| APA | Zheng, K,Ma, XY,Lin, T,Wang, J,Liu, SP,&Zhang, GZ.(2005).Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R.chinese physics letters,22(9),2269-2272. |
| MLA | Zheng, K,et al."Low-threshold-current and high-out-power 660 nm laser diodes with a p-GaAs current blocking layer for DVD-RAM/R".chinese physics letters 22.9(2005):2269-2272. |
入库方式： OAI收割
来源：半导体研究所
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