Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer
文献类型：期刊论文
| 作者 | Yang H; Yang H; Wang H; Jiang DS ; Zhang SM; Wang H
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:12页码:art.no.121914 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION |
| ISSN号 | 0003-6951 |
| 通讯作者 | sun, q, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qsun@red.semi.ac.cn |
| 中文摘要 | the influences of a high-temperature (ht) aln interlayer (il) on the phase separation in crack-free algan grown on gan have been studied. the depth-dependent cathodoluminescence (cl) spectra indicate a relatively uniform al distribution in the growth direction, but the monochromatic cl images and the cl spectra obtained by line scan measurements reveal a lateral phase separation in algan grown on relatively thick ht-aln ils. moreover, when increasing the thickness of ht-aln il, the domain-like distribution of the aln mole fraction in algan layers is significantly enhanced through a great reduction of the domain size. the morphology of mesa-like small islands separated by v trenches in the ht-aln il, and the grain template formed by the coalescence of these islands during the subsequent algan lateral overgrowth, are attributed to be responsible for the formation of domain-like structures in the algan layer. (c) 2005 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8530]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang H,Yang H,Wang H,et al. Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer[J]. applied physics letters,2005,87(12):art.no.121914. |
| APA | Yang H,Yang H,Wang H,Jiang DS,Zhang SM,&Wang H.(2005).Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer.applied physics letters,87(12),art.no.121914. |
| MLA | Yang H,et al."Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer".applied physics letters 87.12(2005):art.no.121914. |
入库方式： OAI收割
来源：半导体研究所
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