Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation
文献类型：期刊论文
| 作者 | Zhao, Q ; Pan, JQ ; Zhang, J ; Zhou, GT ; Wu, J ; Wang, LF ; Wang, W |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:8页码:882-885 |
| 关键词 | 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA output light power of 4.5 mW and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained. |
| ISSN号 | 0268-1242 |
| 通讯作者 | zhao, q, chinese acad sci, inst semicond, natl res ctr optoelect technol, pob 912, beijing 100083, peoples r china. 电子邮箱地址: qzhao@red.semi.ac.cn |
| 中文摘要 | |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8540]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, Q,Pan, JQ,Zhang, J,et al. Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation[J]. semiconductor science and technology,2005,20(8):882-885. |
| APA | Zhao, Q.,Pan, JQ.,Zhang, J.,Zhou, GT.,Wu, J.,...&Wang, W.(2005).Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation.semiconductor science and technology,20(8),882-885. |
| MLA | Zhao, Q,et al."Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation".semiconductor science and technology 20.8(2005):882-885. |
入库方式： OAI收割
来源：半导体研究所
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