Quantum-dot growth simulation on periodic stress of substrate
文献类型:期刊论文
作者 | Xu B![]() |
刊名 | journal of chemical physics
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出版日期 | 2005 |
卷号 | 123期号:9页码:art.no.094708 |
关键词 | KINETIC MONTE-CARLO |
ISSN号 | 0021-9606 |
通讯作者 | zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: czhao@semi.ac.cn ; yhchen@red.semi.ac.cn |
中文摘要 | inas quantum dots (qds) are grown on the cleaved edge of an inxga1-xas/gaas supperlattice experimentally and a good linear alignment of these qds on the surface of an inxga1-xas layer has been realized. the modulation effects of periodic strain on the substrate are investigated theoretically using a kinetic monte carlo method. our results show that a good alignment of qds can be achieved when the strain energy reaches 2% of the atomic binding energy. the simulation results are in excellent qualitative agreement with our experiments. (c) 2005 american institute of physics. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/8542] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu B. Quantum-dot growth simulation on periodic stress of substrate[J]. journal of chemical physics,2005,123(9):art.no.094708. |
APA | Xu B.(2005).Quantum-dot growth simulation on periodic stress of substrate.journal of chemical physics,123(9),art.no.094708. |
MLA | Xu B."Quantum-dot growth simulation on periodic stress of substrate".journal of chemical physics 123.9(2005):art.no.094708. |
入库方式: OAI收割
来源:半导体研究所
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