Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Gong, Z ; Niu, ZC ; Huang, SS ; Fang, ZD ; Sun, BQ ; Xia, JB |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:9页码:art.no.093116 |
| 关键词 | THIN POLYMER-FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zheng.gong@strath.ac.uk ; zcniu@red.semi.ac.cn |
| 中文摘要 | gaas/algaas lattice-matched nanorings are formed on gaas (100) substrates by droplet epitaxy. the crucial step in the formation of nanorings is annealing ga droplets under as flux for proper time. the observed morphologic evolution of ga droplets during annealing does not support the hypothesis that as atoms preferentially react with ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. photoluminescene (pl) test results confirm the quantum-confinement effect of these gaas nanorings. using similar methods, we have fabricated ingaas/gaas lattice-mismatched rings. (c) 2005 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8558]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gong, Z,Niu, ZC,Huang, SS,et al. Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy[J]. applied physics letters,2005,87(9):art.no.093116. |
| APA | Gong, Z,Niu, ZC,Huang, SS,Fang, ZD,Sun, BQ,&Xia, JB.(2005).Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy.applied physics letters,87(9),art.no.093116. |
| MLA | Gong, Z,et al."Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy".applied physics letters 87.9(2005):art.no.093116. |
入库方式： OAI收割
来源：半导体研究所
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