Enhancement of the far-field output power and the properties of the very-small-aperture lasers
文献类型：期刊论文
| 作者 | Gan Q ; Song G ; Xu Y ; Yang G ; Li Y ; Cao Q ; Ma W ; Gao J ; Chen L |
| 刊名 | applied physics b-lasers and optics
 |
| 出版日期 | 2005 |
| 卷号 | 81期号:4页码:503-506 |
| 关键词 | SINGLE SUBWAVELENGTH APERTURE |
| ISSN号 | 0946-2171 |
| 通讯作者 | gan, q, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: gqq@red.semi.ac.cn |
| 中文摘要 | we report on a vsal structure fabricated by a 650 nm edge emitting laser diode with an au-coated facet and an aperture size of 250 x 500 nm. the far field output power can maintain at 1 mw and the power density is 7.5 mw/mu m(2). some properties of the vsal including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. the physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8560]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gan Q,Song G,Xu Y,et al. Enhancement of the far-field output power and the properties of the very-small-aperture lasers[J]. applied physics b-lasers and optics,2005,81(4):503-506. |
| APA | Gan Q.,Song G.,Xu Y.,Yang G.,Li Y.,...&Chen L.(2005).Enhancement of the far-field output power and the properties of the very-small-aperture lasers.applied physics b-lasers and optics,81(4),503-506. |
| MLA | Gan Q,et al."Enhancement of the far-field output power and the properties of the very-small-aperture lasers".applied physics b-lasers and optics 81.4(2005):503-506. |
入库方式： OAI收割
来源：半导体研究所
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