Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles
文献类型：期刊论文
| 作者 | Zhang J ; Su FH ; Chen W ; Sammynaiken R ; Westcott SL ; McCready DE ; Li GH ; Joly AG |
| 刊名 | journal of nanoscience and nanotechnology
 |
| 出版日期 | 2005 |
| 卷号 | 5期号:9页码:1465-1471 |
| 关键词 | ZnMgS : Mn2+ nanoparticles |
| ISSN号 | 1533-4880 |
| 通讯作者 | chen, w, nomadics inc, 1024 s innovat way, stillwater, ok 74074 usa. |
| 中文摘要 | efficient green emission from znmgs:mn2+ nanoparticles prepared by co-doping mg2+ and mn2+ ions into zns lattices has been observed. the synthesis is carried out in aqueous solution, followed by a post-annealing process, thus showing the features of less complexity, low cost, and easy incorporation of dopants. in comparison with the emission of zns:mn2+ nanoparticles, which is located generally around 590 nm, the photoluminescence of znmgs:mn2+ nanoparticles is blue-shifted by 14 nm in wavelength, leading to the enhanced green emission. the x-ray diffraction, electron spin resonance, and pressure dependent photoluminescence measurements suggest that the change of the crystal field caused by mg2+ ionic doping and the lower symmetry in the nanoparticles may account for the blue-shift of the photoluminescence. the znmgs:mn2+ nanoparticles with 1% mn2+ doping exhibit the strongest luminescence, which could potentially meet the requirements for the construction of green light emitting diodes. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8568]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang J,Su FH,Chen W,et al. Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles[J]. journal of nanoscience and nanotechnology,2005,5(9):1465-1471. |
| APA | Zhang J.,Su FH.,Chen W.,Sammynaiken R.,Westcott SL.,...&Joly AG.(2005).Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles.journal of nanoscience and nanotechnology,5(9),1465-1471. |
| MLA | Zhang J,et al."Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles".journal of nanoscience and nanotechnology 5.9(2005):1465-1471. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。