Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
文献类型：期刊论文
| 作者 | Liang, S ; Zhu, HL ; Pan, JQ ; Hou, LP ; Wang, W |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2005 |
| 卷号 | 282期号:3-4页码:297-304 |
| 关键词 | bimodal size distribution |
| ISSN号 | 0022-0248 |
| 通讯作者 | liang, s, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. 电子邮箱地址: liangsong@red.semi.ac.cn |
| 中文摘要 | we present a comparative study of inas quantum dots grown on si-doped gaas (10 0) substrates, si-doped gaas (10 0) vicinal substrates, and semi-insulating gaas (10 0) substrates. the density and size distribution of quantum dots varied greatly with the different substrates used. while dots on exact substrates showed only one dominant size, a clear bimodal size distribution of the inas quantum dots was observed on gaas vicinal substrates, which is attributed to the reduced surface diffusion due to the presence of multiatomic steps. the emission wavelength is blueshifted during the growth of gaas cap layer with a significant narrowing of fwhm. we found that the blueshift is smaller for qds grown on gaas (10 0) vicinal substrates than that for dots on exact gaas (100) substrates. this is attributed to the energy barrier formed at the multiatomic step kinks which prohibits the migration of in adatoms during the early stage of cap layer growth. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8570]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liang, S,Zhu, HL,Pan, JQ,et al. Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD[J]. journal of crystal growth,2005,282(3-4):297-304. |
| APA | Liang, S,Zhu, HL,Pan, JQ,Hou, LP,&Wang, W.(2005).Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD.journal of crystal growth,282(3-4),297-304. |
| MLA | Liang, S,et al."Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD".journal of crystal growth 282.3-4(2005):297-304. |
入库方式： OAI收割
来源：半导体研究所
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