Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
文献类型：期刊论文
| 作者 | Huang, XQ ; Wang, YL ; Li, L ; Liang, L ; Liu, FQ |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:8页码:art.no.083108 |
| 关键词 | INP(001) |
| ISSN号 | 0003-6951 |
| 通讯作者 | liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: fqliu@red.semi.ac.cn |
| 中文摘要 | self-assembled inas quantum wires (qwrs) on inp(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. atom force microscope, transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. we proposed that, by carefully adjusting composition of inalgaas buffer layer and strain compensating spacer layers, stacked qwrs with high uniformity could be achieved. in addition, the formation mechanism and vertical anti-correlation of qwrs are also discussed. (c) 2005 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8574]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang, XQ,Wang, YL,Li, L,et al. Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique[J]. applied physics letters,2005,87(8):art.no.083108. |
| APA | Huang, XQ,Wang, YL,Li, L,Liang, L,&Liu, FQ.(2005).Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique.applied physics letters,87(8),art.no.083108. |
| MLA | Huang, XQ,et al."Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique".applied physics letters 87.8(2005):art.no.083108. |
入库方式： OAI收割
来源：半导体研究所
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