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Interference and non-interference of sidebands in a quantum dot with oscillating levels

文献类型:期刊论文

作者Pan, LX ; Yang, M ; Li, SS
刊名superlattices and microstructures
出版日期2005
卷号38期号:2页码:115-121
关键词quantum dot
ISSN号0749-6036
通讯作者li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: sslee@red.semi.ac.cn
中文摘要when a quantum dot is suffering an ac gate voltage, the sidebands turn up beside the static levels of the dot. we formularized the conductance and current when the effective coupling between levels in the quantum dot induced by the hybrid terms is included using a bi-unitary transform method, and we investigated the interference of the photon sidebands of deferent levels. the interference occurs if the same sidebands of deferent levels overlap, which is possible only when the static levels lie close to and overlap with each other. the overlap of different photon sidebands leads to a simple non-coherent superposition. (c) 2005 elsevier ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8576]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Pan, LX,Yang, M,Li, SS. Interference and non-interference of sidebands in a quantum dot with oscillating levels[J]. superlattices and microstructures,2005,38(2):115-121.
APA Pan, LX,Yang, M,&Li, SS.(2005).Interference and non-interference of sidebands in a quantum dot with oscillating levels.superlattices and microstructures,38(2),115-121.
MLA Pan, LX,et al."Interference and non-interference of sidebands in a quantum dot with oscillating levels".superlattices and microstructures 38.2(2005):115-121.

入库方式: OAI收割

来源:半导体研究所

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