Study on the thermal stability of InN by in-situ laser reflectance system
文献类型：期刊论文
| 作者 | Huang Y ; Wang H ; Sun Q ; Chen J ; Wang JF ; Wang YT ; Yang H |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2005 |
| 卷号 | 281期号:2-4页码:310-317 |
| 关键词 | in situ reflectometry |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang, h, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: wangh@red.semi.ac.cn |
| 中文摘要 | the thermal stability of inn in the growth environment in metalorganic chemical vapor deposition was systematically investigated in situ by laser reflectance system and ex situ by morphology characterization, x-ray diffraction and x-ray photoelectron spectroscopy. it was found that inn can withstand isothermal annealing at temperature as high as 600 degrees c in nh3 ambient. while in n-2 atmosphere, it will decompose quickly to form in-droplets at least at the temperature around 500 degrees c, and the activation energy of inn decomposition was estimated to be 2.1 +/- 0.1 ev. thermal stability of inn when annealing in nh3 ambient during temperature altering would be very sensitive to ramping rate and nh3 flow rate, and inn would sustain annealing process at small ramping rate and sufficient supply of reactive nitrogen radicals. whereas in-droplets formation was found to be the most frequently encountered phenomenon concerning inn decomposition, annealing window for conditions free of in-droplets was worked out and possible reasons related are discussed. in addition, inn will decompose in a uniform way in the annealing window, and the decomposition rate was found to be in the range of 50 and 100 nm/h. hall measurement shows that annealing treatment in such window will improve the electrical properties of inn. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8588]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang Y,Wang H,Sun Q,et al. Study on the thermal stability of InN by in-situ laser reflectance system[J]. journal of crystal growth,2005,281(2-4):310-317. |
| APA | Huang Y.,Wang H.,Sun Q.,Chen J.,Wang JF.,...&Yang H.(2005).Study on the thermal stability of InN by in-situ laser reflectance system.journal of crystal growth,281(2-4),310-317. |
| MLA | Huang Y,et al."Study on the thermal stability of InN by in-situ laser reflectance system".journal of crystal growth 281.2-4(2005):310-317. |
入库方式： OAI收割
来源：半导体研究所
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