Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure
文献类型：期刊论文
| 作者 | Han, XX ; Wu, JJ ; Li, JM ; Cong, GW ; Liu, XL ; Zhu, QS ; Wang, ZG |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:8页码:2096-2099 |
| 关键词 | DISLOCATION SCATTERING |
| ISSN号 | 0256-307x |
| 通讯作者 | han, xx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xxhan@semi.ac.cn |
| 中文摘要 | low-temperature photoluminescence measurement is performed on an undoped alxga1-xn/gan heterostructure. temperature-dependent hall mobility confirms the formation of two-dimensional electron gas (2deg) near the heterointerface. a weak photoluminescence (pl) peak with the energy of similar to 79mev lower than the free exciton (fe) emission of bulk gan is related to the radiative recombination between electrons confined in the triangular well and the holes near the flat-band region of gan. its identification is supported by the solution of coupled one-dimensional poisson and schrodinger equations. when the temperature increases, the red shift of the 2deg related emission peak is slower than that of the fe peak. the enhanced screening effect coming from the increasing 2deg concentration and the varying electron distribution at two lowest subbands as a function of temperature account for such behaviour. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8602]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han, XX,Wu, JJ,Li, JM,et al. Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure[J]. chinese physics letters,2005,22(8):2096-2099. |
| APA | Han, XX.,Wu, JJ.,Li, JM.,Cong, GW.,Liu, XL.,...&Wang, ZG.(2005).Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure.chinese physics letters,22(8),2096-2099. |
| MLA | Han, XX,et al."Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure".chinese physics letters 22.8(2005):2096-2099. |
入库方式： OAI收割
来源：半导体研究所
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