Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE
文献类型：期刊论文
| 作者 | Zhang NH ; Wang XL ; Zeng YP ; Xiao HL ; Wang JX ; Liu HX ; Li JM |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2005 |
| 卷号 | 38期号:12页码:1888-1891 |
| 关键词 | TEMPERATURE ALN INTERLAYERS |
| ISSN号 | 0022-3727 |
| 通讯作者 | zhang, nh, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: znhong@red.semi.ac.cn |
| 中文摘要 | we describe the growth of gan on si (111) substrates with a algan/aln buffer layer by nh3-gsmbe. the influence of the aln and algan buffer layer thickness on the crack density of gan has been investigated. it is found that the optimum thickness is 120 nm and 250 nm for aln and algan layers, respectively. the full width at half maximum of the gan (0002) peak in the triple-crystal x-ray rocking curve measurement is about 15 arcmin. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8610]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang NH,Wang XL,Zeng YP,et al. Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE[J]. journal of physics d-applied physics,2005,38(12):1888-1891. |
| APA | Zhang NH.,Wang XL.,Zeng YP.,Xiao HL.,Wang JX.,...&Li JM.(2005).Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE.journal of physics d-applied physics,38(12),1888-1891. |
| MLA | Zhang NH,et al."Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE".journal of physics d-applied physics 38.12(2005):1888-1891. |
入库方式： OAI收割
来源：半导体研究所
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