Photoluminescence of low-dimensional semiconductor structures under pressure
文献类型：期刊论文
| 作者 | Li GH ; Chen Y ; Fang ZL ; Ma BS ; Su FH ; Ding K |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2005 |
| 卷号 | 24期号:3页码:174-178 |
| 关键词 | pressure |
| ISSN号 | 1001-9014 |
| 通讯作者 | li, gh, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | photoluminescence of some low-dimensional semiconductor structures has been investigated under pressure. the measured pressure coefficients of in0.55al0.45 as/al0.5ga0.5as quantum dots with average diameter of 26, 52 and 62 nm are 82, 94 and 98 mev/gpa, respectively. it indicates that these quantum dots are type-i dots. on the other hand, the measured pressure coefficient for quantum dots with 7 nm in size is -17mev/gpa, indicating the type-ii character. the measured pressure coefficient for mn emission in zns:mn nanoparticles is -34.6mev/gpa, in agreement with the predication of the crystal field theory. however, the da emission is nearly independent on pressure, indicating that this emission is related to the surface defects in zns host. the measured pressure coefficient of cu emission in zns: cu nanoparticles is 63.2 mev/gpa. it implies that the acceptor level introduced by cu ions has some character of shallow level. the measured pressure coefficient of eu emission in zns:eu nanoparticles is 24.1 mev/gpa, in contrast to the predication of the crystal field theory. it may be due to the strong interaction between the excited state of eu ions and the conduction band of zns host. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8652]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li GH,Chen Y,Fang ZL,et al. Photoluminescence of low-dimensional semiconductor structures under pressure[J]. journal of infrared and millimeter waves,2005,24(3):174-178. |
| APA | Li GH,Chen Y,Fang ZL,Ma BS,Su FH,&Ding K.(2005).Photoluminescence of low-dimensional semiconductor structures under pressure.journal of infrared and millimeter waves,24(3),174-178. |
| MLA | Li GH,et al."Photoluminescence of low-dimensional semiconductor structures under pressure".journal of infrared and millimeter waves 24.3(2005):174-178. |
入库方式： OAI收割
来源：半导体研究所
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