Optical properties and exciton localization in GaNas/GaAs
文献类型：期刊论文
| 作者 | Tan PH
|
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2005 |
| 卷号 | 24期号:3页码:185-188 |
| 关键词 | GaNAs |
| ISSN号 | 1001-9014 |
| 通讯作者 | luo, xd, nantong univ, sch sci, jiangsu provincial key lab asic design, nantong 226007, peoples r china. |
| 中文摘要 | ganas/gaas single quantum wells (sqws) and dilute ganas bulk grown by molecular beam epitaxy(mbe) were studied by photoluminescence (pl), selectively-excited pl, and time-resolved pl. exciton localization and delocalization were investigated in detail. under short pulse laser excitation, the delocalization exciton emission was revealed in ganas/gaas sqws. it exhibits quite different optical properties from n-related localized states. in dilute ganas bulk, a transition of alloy band related recombination was observed by measuring the pl dependence on temperature and excitation intensity and time-resolved pl, as well. this alloy-related transition presents intrinsic optical properties. these results are very important for realizing the abnomal features of iii-v-n semiconductors. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8654]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH. Optical properties and exciton localization in GaNas/GaAs[J]. journal of infrared and millimeter waves,2005,24(3):185-188. |
| APA | Tan PH.(2005).Optical properties and exciton localization in GaNas/GaAs.journal of infrared and millimeter waves,24(3),185-188. |
| MLA | Tan PH."Optical properties and exciton localization in GaNas/GaAs".journal of infrared and millimeter waves 24.3(2005):185-188. |
入库方式： OAI收割
来源：半导体研究所
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