Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer
文献类型：期刊论文
| 作者 | Huang FY ; Wang XF ; Sun GS ; Zhao WS ; Zeng YP ; Bian EL |
| 刊名 | thin solid films
 |
| 出版日期 | 2005 |
| 卷号 | 484期号:1-2页码:261-264 |
| 关键词 | silicon carbide |
| ISSN号 | 0040-6090 |
| 通讯作者 | huang, fy, chinese acad sci, inst semicond, 35 e qinghua rd, beijing 100083, peoples r china. 电子邮箱地址: fyhuang@seu.edu.cn |
| 中文摘要 | we report on the comparative studies of epitaxial sic films grown on silicon-on-insulator (soi) and si bulk substrates. the silicon-over-layer (sol) on the soi has been thinned down to different thicknesses, with the thinnest about 10 nm. it has been found that the full-width-at-half-maxim in the x-ray diffraction spectrum from the sic films decreases as the sol thickness decreases, indicating improved quality of the sic film. a similar trend has also been found in the raman spectrum. one of the potential explanations for the observation is strain accommodation by the ultra-thin soi substrate. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8668]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang FY,Wang XF,Sun GS,et al. Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer[J]. thin solid films,2005,484(1-2):261-264. |
| APA | Huang FY,Wang XF,Sun GS,Zhao WS,Zeng YP,&Bian EL.(2005).Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer.thin solid films,484(1-2),261-264. |
| MLA | Huang FY,et al."Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer".thin solid films 484.1-2(2005):261-264. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。